| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a p-type impurity can be prevented from abnormally diffusing in a low-concentration region. <P>SOLUTION: The semiconductor device comprises a first and a second group III-V compound semiconductor layer, either one of which serves as a light-sensitive layer or a luminous layer and is doped with a p-type impurity in small concentration, and which are mutually heterozygous. The energy gap of the second group III-V compound semiconductor layer is smaller than that of the first group III-V compound semiconductor layer. Be or C is employed as a p-type dopant in each semiconductor layer. At this time, the second group III-V compound semiconductor layer may be laminated on the first group III-V compound semiconductor layer. Moreover, the first group III-V compound semiconductor layer and second group III-V compound semiconductor layer may each contain at least one or more of (In, Ga, Al) and (As, P, N). <P>COPYRIGHT: (C)2008,JPO&INPIT |
