| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a TMR element capable of obtaining a high MR ratio without performing high-temperature annealing treatment when using a tunnel barrier layer made of a crystalline insulating material, and to provide a thin-film magnetic head, a magnetic memory, and a method of manufacturing the TMR element. <P>SOLUTION: There are provided: a lower magnetic layer; an upper magnetic layer; and a tunnel barrier layer made of the crystalline insulating material sandwiched by the lower and upper magnetic layers. The lower magnetic layer contains a first magnetic layer, and a second magnetic layer sandwiched between the first magnetic layer and the tunnel barrier layer. The second magnetic layer is composed of a magnetic material including at least one of Fe, cobalt Co, and nickel Ni. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
