| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film production method which enables production of a hexagonal-crystal thin film with c-axis in-plane orientation. <P>SOLUTION: A rectangular magnetron circuit 23 is arranged on the undersurface of a rectangular target 22. One-half of the target 22 is covered by a shielding plate 51, thus shielding sputtered particles sputtered from an erosion area 39 underneath (highest magnetic flux-density area) so as not to fly to a substrate 28. The substrate 28 is arranged to position inside a plasma region in a vacuum chamber 21, and the sputtered particles sputtered from a region exposed from the shielding plate 51 of the erosion area 39 are made to be incident to the surface of the substrate 28. Since the mean free path of the sputtered particles becomes long and a large amount of high-energy sputtered particles is incident by lessening a gas pressure, the crystal particles having a crystal plane (11-20) hardly damaging by incidence of the high-energy sputtered particles are preferentially grown, and the film with c-axis in-plane orientation is thus formed. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
