| 摘要 |
A supporting substrate for a semiconductor light emitting device and the semiconductor light emitting device of vertical structure using the same are provided to improve the whole performance by reducing damage of a multi-layered structure of semiconductor single crystal that is lifted off from an initial growth substrate, by using a prepared supporting substrate. A selected supporting substrate(400) is made of a certain material, and is used as a substrate of a semiconductor light emitting device. A sacrificial layer(410) is formed on the upper portion of the selected supporting substrate, and a heat sink layer having excellent thermal and electrical conductivity is formed on the upper portion of the sacrificial layer. A bonding layer(430) is deposited on the upper portion of the heat sink layer. The selected supporting substrate is made of electrical conductor.
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