LOW-K DAMAGE AVOIDANCE DURING BEVEL ETCH PROCESSING

摘要

A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO₂, CO, C_xH_y, H₂, NH₃, C_xH_yF_z and a combination thereof, forming a cleaning plasma from the cleaning gas, and exposing the bevel edge to the cleaning plasma. Features are etched into the etch layer through the photoresist features and the photoresist mask is removed.