发明名称 CURRENT SENSING CIRCUIT
摘要 A current sensing circuit is provided to reduce complexity of a design and to occupy a small area if the current sensing circuit is produced as a real chip. A current sensing circuit for sensing current flowing in an MOS(Metal-Oxide Semiconductor) transistor(503) by calculating a voltage drop value of the MOS transistor is composed of an amplifier(510), a PMOS(P-channel Metal Oxide Semiconductor) transistor, and first and second resistors(501,502). One end of the first resistor is connected with a source of the MOS transistor and the other end is coupled with a negative input stage(512) of the amplifier and a source of the PMOS transistor. The second resistor is connected between a ground and a drain of the PMOS transistor. A positive input stage(511) of the amplifier is connected to a drain of the MOS transistor. The output of the amplifier is coupled to a gate of the PMOS transistor. The current sensing circuit calculates a voltage drop value by using sensing voltage(Vsense) that is a drain voltage of the PMOS transistor, and first and second resistor values.
申请公布号 KR100836900(B1) 申请公布日期 2008.06.11
申请号 KR20070014017 申请日期 2007.02.09
申请人 IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) 发明人 ROH, JEONG JIN;HEO, DONG HUN
分类号 G01R19/15;G01R31/28 主分类号 G01R19/15
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