| 摘要 |
<p>An alignment key of a semiconductor device and a method of manufacturing the semiconductor device are provided to improve an alignment margin and form an alignment key of multi-step. A portion of a semiconductor substrate(100) in an alignment mark forming region is etched to form a trench(120). The trench is gap-filled by using an insulating material(130). The insulating material gap-filled in the trench is etched in a certain thickness to form a line pattern having a first step. An etching process for etching an upper portion of a sidewall of the line pattern is repeated by n times to form a line pattern having multi-step. The insulating material is an oxide layer for isolation. The etching process for etching the insulating material is performed by using a key open mask.</p> |
