METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method of fabricating a semiconductor device is provided to prevent deformation of a pattern layer by etching the pattern layer using an amorphous carbon layer as an etch barrier. A pattern layer(20) and an amorphous carbon layer(30) are formed on a wafer(10), and then the amorphous carbon layer is etched. The pattern layer is etched by using the amorphous carbon layer as an etch mask. The amorphous carbon layer is removed from an edge region of the wafer through bevel etching. The step of etching the amorphous carbon layer includes forming an anti-reflective layer(40) on the amorphous carbon layer, forming a photoresist mask pattern on the anti-reflective layer, and etching the anti-reflective layer and the amorphous carbon layer.