| 摘要 |
An image sensor and a manufacturing method thereof are provided to improve the electric characteristic of the image sensor by preventing formation of a bridge when a reflow process is performed. Plural color filter groups(20 to 24) are formed on a pixel array substrate(10), and after a photoresist pattern is formed on the color filters which are not adjacent to each other, a reflow process is performed on the photoresist pattern to form micro lenses(41,43). After a photoresist pattern is formed on the remaining color filters which are not adjacent to each other, a reflow process is performed on the photoresist pattern to form micro lenses(42,44). The color filter group is composed of a first red filter, a second green filter, and a third blue filter.
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