METHOD OF FORMING A SILICON CHANNEL LAYER AND METHOD OF MANUFACTURING STACKED MEMORY DEVICE

摘要

A method of forming a silicon channel layer and a method of manufacturing a stack memory device are provided to improve the yield of the device by forming the silicon channel layer with minimized thickness distribution variations. A second substrate(126) jointed to a first substrate(100) is prepared, and then a polishing stop layer(130) having polishing selectivity different from a silicon(140) is formed on the second substrate. A silicon layer is formed on the polishing stop layer to cover a damaged edge region of the second substrate at an ion cutting process. The silicon layer is removed by a first chemical mechanical polishing process until the surface of the polishing stop layer is exposed. The polishing stop layer is removed, and then the second substrate is polished by a second chemical mechanical polishing process to form the second substrate as a silicon channel layer of the first substrate.