| 摘要 |
A method for forming a conductive layer of a semiconductor device is provided to reduce the condensation of a metal silicide layer and to uniformly form an interface between the metal silicide layer and a silicide layer by forming a metal layer. A substrate(100) is induced in a chamber. A dielectric layer(110) is formed on the substrate to expose a part thereof. NH3 is implanted into the substrate in the chamber to nitrate surfaces of the exposed substrate and the dielectric layer. When source gas including TiCl4 is induced, a high frequency power is applied to the nitrated substrate and the dielectric to form a silicide layer on a surface part of the nitrated substrate and to form a TiN layer(130) on the nitrated dielectric. Before the exposed substrate and the surfaces of the dielectric layer are nitrated, an oxide layer formed on a substrate surface exposed by the dielectric layer is removed. After the Ti layer is formed, a TiN layer(135) for preventing diffusion is formed on the substrate including the TiN layer.
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