发明名称
摘要 <p>PROBLEM TO BE SOLVED: To provide a package substrate which allows a high capacitance capacitor to be disposed in the vicinity of an IC chip. SOLUTION: Since a capacitor for power composed of a metallic substrate 12 is disposed immediately under an IC chip 70, a distance between the IC chip and the capacitor becomes short and thereby loop inductance can be reduced. A through hole 26 for connecting to a daughter board 80 is provided on a resin substrate 20 side housing the metallic substrate 12. Since signal lines do not pass through a dielectric layer 14, reflection caused by incomplete impedance matching due to a high dielectric and transmission delay due to passing through the high dielectric are prevented.</p>
申请公布号 JP4097364(B2) 申请公布日期 2008.06.11
申请号 JP19990194168 申请日期 1999.07.08
申请人 发明人
分类号 H01L23/12;H05K3/46 主分类号 H01L23/12
代理机构 代理人
主权项
地址