| 摘要 |
A flash memory device having a multi level cell and a reading method thereof are provided to perform normal read operation even though at least more than two data have a threshold voltage below 0V, by performing read operation as applying a bulk bias during the read operation of data with a threshold voltage below 0V. According to a flash memory device having memory cells arranged in a plurality of bit lines and a plurality of word lines, a row decoder(440) generates a block selection signal according to a row address signal. A high voltage generator(430) applies a bulk bias to a bulk in order to increase a threshold voltage of the memory cell while lower bits of data stored in a memory cell selected according to the block selection signal is detected. Page buffers are connected to the bit lines.
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