DUAL-BIT MEMORY DEVICE AND METHOD MANUFACTURING THE SAME

摘要

A dual bit memory device and a manufacturing method thereof are provided to reduce a standby power to be applied to store certain information by using a trap site that tunnels charge to be applied to a write word line. A bit line(20) having a desired thickness is formed in a first direction on a substrate(10) having a desired flat surface. A write word line(30) is extended in a second direction perpendicular to the bit line, and is isolated from the bit line. An electrode is electrically connected to the bit line on the write word line, and is bent towards the write word line. A read word line(40) is formed over the electrode, and is extended in the second direction in parallel with the write word line. A trap site(80) is independently formed at a portion in which the write word line crosses the read word line.