SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device is provided to reduce influence upon a semiconductor device by the characteristic of the end part of a silicon layer having a channel formation region by decreasing defects caused by the end part of the silicon layer. An insulation layer(102) is formed on a substrate(100). A single crystalline semiconductor layer of an island type is formed on the insulation layer. A gate insulation layer comes in contact with the upper and lateral surfaces of the single crystalline semiconductor layer. A gate electrode is formed on the gate insulation layer, crossing the single crystalline semiconductor layer. The dielectric constant of the gate insulation layer in a region in contact with the lateral surface of the single crystalline semiconductor layer is less than that in a region in contact with the upper surface of the single crystalline semiconductor layer. The gate insulation layer can include a first insulation layer in contact with the upper surface of the single crystalline semiconductor layer and a second insulation layer in contact with the lateral surface of the single crystalline semiconductor layer.