| 摘要 |
<p>A structure of WLCSP(wafer level chip size package) with a metal cover is provided to protect a silicon chip without damaging the silicon chip by forming a package structure with a protection film. A plurality of dies are formed on a wafer(5) in which a trench is formed. A dielectric layer(11) is formed on the plurality of dies, re-filled in the trench to expose the pads of the plurality of dies. A metal layer is attached to the upper surface of the wafer by an adhesive material. A protection film is formed on the back surface of the metal layer. A conductive trace(17) is formed on the dielectric layer, coupled to the pads. A solder mask covers the conductive trace and the dielectric layer, exposing a portion of the conductive trace. Solder balls are formed on the exposed portion, coupled to the conductive trace. The material of the protection film can include epoxy resin, compound, a dielectric layer, silicon, blue tape, UV(ultraviolet) tape, silicon rubber, silicon resin, elastic PU, porous PU or acryl rubber.</p> |
