| 摘要 |
A method for fabricating a semiconductor device is provided to avoid limitations on the material of a conductive layer filled in a wafer by stably forming a via structure capable of preventing a semiconductor substrate from being broken by a difference of thermal expansion between a buried conductive layer and the semiconductor substrate. A device formation layer(30) is formed on a first surface(21A) of a semiconductor substrate, and an external connection terminal(48) is formed on a second surface(21B) confronting the first surface of the semiconductor substrate wherein the external connection terminal is electrically connected to the device formation layer by a via. The via is formed by the following steps. A buried conductive layer(27) is formed on the first surface, electrically insulated from the semiconductor substrate. A connection hole(40,40A,40B) is formed in the second surface, connected to the buried conductive layer. The buried conductive layer is electrically connected to the connection hole. The process for forming the buried conductive layer can be performed before or after the device formation layer is formed. |
