| 摘要 |
PROBLEM TO BE SOLVED: To eliminate the deviation between a resonator direction and a laser emission plane by forming a stripe-like protective film parallel to the M-plane of a sapphire obtained by the cleavage to form an element structure parallel also to a resonator direction. SOLUTION: Using the cleavage of a sapphire substrate having a first orientation flat plane at the A-plane and a main plane at the C-plane, it is cleaved in a direction approximately perpendicular to the A-plane to expose the M-plane of sapphire, this is set as a second orientation flat plane, the substrate is set in an MOCVD reactor chamber, e.g. an undoped GaN layer is formed at 500 deg.C as a base layer, a first undoped GaN semiconductor layer is formed e.g. at 1050 deg.C, a stripe-like photomask is formed on this GaN semiconductor layer, and a protective layer with stripes parallel to the second orientation flat plane is formed by a CVD apparatus. |
