发明名称 |
ELECTRONIC GRADE METAL NANOSTRUCTURES |
摘要 |
Methods for producing electronic grade metal nanostructures having low levels of contaminants are provided. Monolayer arrays, populations, and devices including such electronic grade nanostructures are described. In addition, novel methods and compositions for production of Group 10 metal nanostructures and for production of ruthenium nanostructures are provided, along with methods for recovering nanostructures from suspension. |
申请公布号 |
EP1928651(A2) |
申请公布日期 |
2008.06.11 |
申请号 |
EP20060801858 |
申请日期 |
2006.08.18 |
申请人 |
NANOSYS, INC. |
发明人 |
RANGANATHAN, SRIKANTH;BERNATIS, PAUL;GAMORAS, JOEL;LIU, CHAO;PARCE, J., WALLACE |
分类号 |
B32B3/00 |
主分类号 |
B32B3/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|