IMPLANTATION APPRATUS AND INSULATOR OF ION IMPLANTATION APPRATUS

摘要

An ion implantation apparatus and an insulator for the same are provided to prolong a cleaning cycle of the insulator by delaying insulation breakdown of the insulator. A beam line chamber(100) receives an ion implantation reaction gas and a power to generate an ion beam. A beam adjusting adaptor(102) adjusts the ion beam emitted from the beam line chamber which is set to the final energy. A process chamber(106) executes ion implantation on a wafer using the ion beam adjusted by the beam adjusting adaptor. The process chamber is insulated from the beam adjusting adaptor by an insulator(104) having an opening(108) for supplying the ion beam to the process chamber. A power source(110) applies a high voltage between the process chamber and the beam adjusting adaptor.