CMOS IMAGER WITH NITRIDED GATE OXIDE AND METHOD OF FABRICATION,申请号EP20060801519-传众专利搜索

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发明名称	CMOS IMAGER WITH NITRIDED GATE OXIDE AND METHOD OF FABRICATION
摘要
申请公布号	EP1929529(A2)	申请公布日期	2008.06.11
申请号	EP20060801519	申请日期	2006.08.16
申请人	MICRON TECHNOLOGY, INC.	发明人	LI, JIUTAO
分类号	H01L27/146	主分类号	H01L27/146
代理机构		代理人
主权项
地址

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