GATE ELECTRODE FOR SEMICONDUCTOR DEVICE AND THE METHOD FOR MANUFACTUREING SEMICONDUCTOR DEVICE HAVING THE SAME

摘要

A gate electrode for a semiconductor device and a method of fabricating a semiconductor device are provided to fabricate a semiconductor device highly doped with boron ion by preventing the reaction between the boron ion and titanium. A polysilicon layer(420a) formed on a gate dielectric of a semiconductor substrate(400) is implanted with boron ions. A first conductive layer(430a) of cobalt is formed on the polysilicon layer, and then a second conductive layer(450a) of cobalt is formed on the first conductive layer. A third conductive layer is formed on the second conductive layer, and then the third conductive layer, the second conductive layer, the first conductive layer, the polysilicon layer and the gate dielectric layer are sequentially patterned to form a gate electrode.