METHOD FOR USING A MEMORY CELL COMPRISING SWITCHABLE SEMICONDUCTOR MEMORY ELEMENT WITH TRIMMABLE RESISTANCE,申请号EP20060815745-传众专利搜索

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发明名称	METHOD FOR USING A MEMORY CELL COMPRISING SWITCHABLE SEMICONDUCTOR MEMORY ELEMENT WITH TRIMMABLE RESISTANCE
摘要
申请公布号	EP1929525(A1)	申请公布日期	2008.06.11
申请号	EP20060815745	申请日期	2006.09.27
申请人	SANDISK 3D LLC	发明人	KUMAR, TANMAY;HERNER, BRAD, S.;PETTI, CHRISTOPHER, J.;SCHEUERLEIN, ROY, E.
分类号	H01L27/10;G11C11/56;H01L27/24	主分类号	H01L27/10
代理机构		代理人
主权项
地址

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