Method for fabricating thin film transistor substrate

摘要

Thin film transistor substrate formation comprises forming a passivation film (150) and a pixel electrode (160) where a contact hole (151) is formed by removing two photo-resist patterns, which remain on the passivation film after etching a transparent conductive film, which is exposed by the second photo-resist pattern. Thin film transistor substrate formation comprises forming a gate line (120) on a substrate; forming a data line (130), which crosses the gate line with a gate insulating film (125) between them; forming a thin film transistor (140) at the crossing part of the gate line and the data line; forming a first photo-resist pattern for opening an area where a contact hole and a pixel electrode are to be formed after forming a passivation film on the gate insulating film where the thin film transistor is formed; forming a second photo-resist pattern that exposes a transparent conductive film formed in an area other than the area where the contact hole and the pixel electrode are to be formed after depositing the transparent conductive film on the entire surface of the passivation film where the first photoresist pattern is formed; and forming the passivation film and the pixel electrode where the contact hole is formed by removing the first and second photo-resist patterns, which remain on the passivation film after etching the transparent conductive film, which is exposed by the second photo-resist pattern.