| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a blank for a half tone type phase shift mask which satisfies an optical constant as a phase shift mask, controls the reflectivity with exposure light and the transmittance at an inspection wavelength and has high pattern forming accuracy and a half tone type phase shift mask. SOLUTION: The half tone type phase shift mask blank is manufactured by introducing gaseous argon(Ar) and gaseous carbon dioxide (CO2 ) by using an RF sputtering device onto a translucent substrate 1 and executing reactive sputtering by using a zirconium silicide target, thereby forming a translucent film 2 consisting of a carbooxidized zirconium silicide film thereon. Further, the half tone type phase shift mask consisting of the translucent film patterns 2a is manufactured by forming resistance patterns 3 and dry etching the translucent film 2.</p> |
