<p>A method for manufacturing an electronic device using a nanowire is provided to reduce a manufacturing cost and a manufacturing time for the electronic device by reducing a process using an E-beam. An electrode is formed on a substrate(S11). Plural nanowires are applied on the substrate on which the electrode is formed(S12). An image with respect to the substrate on which the nanowire and the electrode are formed is captured(S13). A virtual connection line connecting the nanowire to the electrode is drawn on the image by using an electrode pattern simulated through a computer program(S14). A photoresist for an E-beam is applied onto the substrate(S15). The photoresist formed on a position corresponding to the virtual connection line and the electrode pattern is removed by an E-beam lithography process(S16). A metal layer is deposited on the substrate(S17). The photoresist remaining on the substrate is removed by a lift-off process(S18).</p>
申请公布号
KR20080052251(A)
申请公布日期
2008.06.11
申请号
KR20070061450
申请日期
2007.06.22
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE;KOREA UNIVERSITY INDUSTRIAL & ACADEMIC COLLABORATION FOUNDATION
发明人
MOON, SEUNG EON;KIM, EUN KYOUNG;LEE, HONG YEOL;PARK, JONGH YURK;PARK, KANG HO;KIM, JONG DAE;PARK, SO JEONG;KIM, GYU TAE