发明名称 PROCESS FOR INTEGRATING PLANAR AND NON-PLANAR CMOS TRANSISTORS ON A BULK SUBSTRATE AND ARTICLE MADE THEREBY
摘要 A process capable of integrating both planar and non-planar transistors onto a bulk semiconductor substrate, wherein the channel of all transistors is definable over a continuous range of widths.
申请公布号 EP1929516(A2) 申请公布日期 2008.06.11
申请号 EP20060815547 申请日期 2006.09.26
申请人 INTEL CORPORATION 发明人 KAVALIEROS, JACK;BRASK, JUSTIN;DOYLE, BRIAN;SHAH, UDAY;DATTA, SUMAN;DOCZY, MARK;METZ, MATTHEW;CHAU, ROBERT
分类号 H01L21/8234;H01L21/336;H01L29/10 主分类号 H01L21/8234
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