PROCESS FOR INTEGRATING PLANAR AND NON-PLANAR CMOS TRANSISTORS ON A BULK SUBSTRATE AND ARTICLE MADE THEREBY
摘要
A process capable of integrating both planar and non-planar transistors onto a bulk semiconductor substrate, wherein the channel of all transistors is definable over a continuous range of widths.
申请公布号
EP1929516(A2)
申请公布日期
2008.06.11
申请号
EP20060815547
申请日期
2006.09.26
申请人
INTEL CORPORATION
发明人
KAVALIEROS, JACK;BRASK, JUSTIN;DOYLE, BRIAN;SHAH, UDAY;DATTA, SUMAN;DOCZY, MARK;METZ, MATTHEW;CHAU, ROBERT