A HAVE(hydride vapor phase epitaxy) apparatus is provided to improve light emitting efficiency and avoid damage caused by etching by forming a light emitting part of a round pillar shape by a selective growth process. A substrate is disposed in a growth region of a reaction furnace. A metal source supplying apparatus(300) is disposed in the reaction furnace. A halogenation reaction gas supplying part(503) supplies halogenation reaction gas to the metal gas supplying apparatus. A nitridization reaction gas supplying part(505) supplies nitridization reaction gas to the inside of the reaction furnace. The metal gas supplying apparatus includes a boat(330) and a sliding plate(350) disposed on the upper surface of the boat wherein the boat has a plurality of wells for containing a metal source melt and the sliding plate has a through hole. The sliding plate can be transferred on the upper surface of the boat to selectively open the well through the through hole. The metal source supplying apparatus can be disposed in a tube connected to the halogenation reaction gas supplying part.
