| 摘要 |
A method for fabricating a light emitting device including a current spreading layer is provided to improve current transfer on a two-dimensional plane as compared with a bulk structure of an n-GaN and p-GaN by using a 2-DEG(dimensional electron gas) and 2-DHG(dimensional hole gas) heterojunction structure as n-type and p-type current spreading layers. A buffer layer is formed on a substrate(11). An n-type electrode layer(14) of a multilayered structure is formed on the buffer layer, including an n-type current spreading layer(14b) using a heterojunction structure. An active layer(15) is formed on the n-type electrode layer. A p-type electrode layer(17) of a multilayered structure is formed on the active layer, including a p-type current spreading layer(17b) using a heterojunction structure. An etch process can be performed to expose the n-type current spreading layer formed in the n-type electrode layer. N-type and p-type trenches(18,19) can be respectively formed in the exposed n-type and p-type current spreading layers. Metal electrode layers(20,21) can be inserted into each trench to form n-type and p-type metal electrode layers. A transparent electrode layer(22) can be formed on the p-type metal electrode layer.
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