| 摘要 |
In a cleaning step of a substrate-processing device, vacuum drawing is made for the space between an inner chamber and an outer chamber that receives the inner chamber. Temperature of the inner chamber is set higher than the temperature of the inner chamber during substrate processing and set lower than the temperature of a substrate support member. After that, a cleaning gas containing hexafluoroacetylaceton (Hhfac) is supplied in the inner chamber, and substances to be cleaned off adhering inside the inner chamber are removed.
|
