| 摘要 |
<p>A multi-bit resistive memory is provided to store a number of data bits by programming a phase change memory to have middle resistances or states. A multi-bit resistive memory includes a first multi bit resistive memory cell(112a) and a single bit resistive memory cell(114a-114d). The single bit resistive memory cell stores bits indicating whether data stored in the first multi bit resistive memory cell is inverted or not. The memory further includes a second multi bit resistive memory cell(112b), and the single bit resistive memory cell stores the bit indicating whether the data stored in the second multi bit resistive memory cell is inverted. A bit line(BL) is coupled to the single bit resistive memory cell, the first multi bit resistive memory cell and the second multi bit resistive memory cell.</p> |
