| 摘要 |
<p>A method for manufacturing a thin film transistor is provided to prevent an over-exposure and the exposure of a gate metal pattern by using a mask on which a compensation pattern is formed. A gate metal pattern(113) including a gate electrode and a gate pad is formed on a substrate. A gate dielectric(120) and first and second semiconductor layers(130) are formed on an upper portion of the gate metal pattern formed on the substrate. A first contact hole passes through the first and second semiconductor layers formed on an upper portion of the gate pad. Patterning the first and second semiconductor layers is formed by using a mask(200) on which a compensation pattern(211) is formed. After the first contact hole is formed and the first and second semiconductor layers are patterned, a data metal pattern is formed. The data metal pattern includes a data line, a source electrode, a drain electrode, and a data connecting pattern. A protective layer is formed on an upper portion of the data metal pattern formed on the substrate. A second contact hole is formed to pass through the protective layer and expose the drain electrode. A third contact hole is formed to expose the data connecting pattern. A pixel electrode is connected to the drain electrode through the second contact hole. The pixel electrode is formed on an upper portion of the protective layer. A connecting electrode is connected to the gate pad through the third contact hole.</p> |
