发明名称 Circuit for generating step-up voltage in non-volatile memory device
摘要 A circuit for generating a step-up voltage, in which it can reduce ripples. The circuit includes a high voltage transfer switch, a high voltage switching unit that pumps a high voltage in response to a clock signal and switches the high voltage transfer switch, a high voltage switching controller, which compares a feedback voltage generated by dividing an output signal of the high voltage transfer switch and a variable reference voltage, generates an internal clock signal using the comparison result and the clock signal, and controls the switching of the high voltage transfer switch in response to the comparison result, and a step-up voltage generator that pumps the high voltage in response to the internal clock signal and a plurality of step-up reference voltages and generates an internal step-up voltage. The high voltage transfer switch outputs the internal step-up voltage in response to the output signal of the high voltage switching unit.
申请公布号 US7385852(B2) 申请公布日期 2008.06.10
申请号 US20060477568 申请日期 2006.06.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHUNG SANG HWA
分类号 G11C11/34 主分类号 G11C11/34
代理机构 代理人
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