| 摘要 |
In a disclosed COC type semiconductor device, a bump electrode ( 21 ) of a second semiconductor chip ( 2 ) is joined to a first semiconductor chip ( 1 ) having a bump electrode ( 11 ) formed thereon. The bump electrodes ( 11 ) and ( 21 ) of the respective first and second semiconductor chips ( 1 ) and ( 2 ) are both made of first metal such as Au having a relatively high melting point, while a joining portion of these bump electrodes ( 11 ) and ( 21 ) is formed of an alloy layer ( 3 ) of the first metal and second metal, which second metal is made of such a material that can melt at a lower temperature than the melting point of the first metal to be alloyed with it. As a result, in the COC type semiconductor device, when interconnecting a plurality of semiconductor chips, their electrode terminals can be joined to each other without deteriorating the properties of these chips owing to the high temperature applied thereon.
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