| 摘要 |
FIELD: thin films technology and multi-layer nano-structures. ^ SUBSTANCE: "metallic film - semiconductor or insulating substrate" structure is exposed to microwave radiation using a wave guide system. In front of the structure there is a dielectric plate with thickness L, and dielectric coefficient epsid, for which, in the chosen frequency range on one of the frequencies omega1, the condition holds, and on another frequency omega2, the condition holds, where a is the typical size of the cross-section of the wave guide system, omega=2pif is the angular frequency of the radiation, and epsi0 and mu0 are the dielectric and magnetic permittivity in a vacuum, respectively. Relative dielectric permittivity of the chosen dielectric plate should be more than 2. Electro-conductivity or thickness of the metallic film is determined from the frequency response of the reflection coefficient of the structure. ^ EFFECT: broader range of the measured thickness and class of the analysed materials and increased sensitivity. ^ 2 cl, 6 dwg |
