发明名称 Memory devices using carbon nanotube (CNT) technologies
摘要 Structures and methods for operating the same. The structure includes (a) a substrate; (b) a first and second electrode regions on the substrate; and (c) a third electrode region disposed between the first and second electrode regions. In response to a first write voltage potential applied between the first and third electrode regions, the third electrode region changes its own shape, such that in response to a pre-specified read voltage potential subsequently applied between the first and third electrode regions, a sensing current flows between the first and third electrode regions. In addition, in response to a second write voltage potential being applied between the second and third electrode regions, the third electrode region changes its own shape such that in response to the pre-specified read voltage potential applied between the first and third electrode regions, said sensing current does not flow between the first and third electrode regions.
申请公布号 US7385839(B2) 申请公布日期 2008.06.10
申请号 US20050275010 申请日期 2005.12.01
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 FURUKAWA TOSHIHARU;HAKEY MARK CHARLES;HOLMES STEVEN JOHN;HORAK DAVID VACLAV;KOBURGER, III CHARLES WILLIAM
分类号 G11C11/00 主分类号 G11C11/00
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