| 摘要 |
A nonvolatile memory cell ( 1 ) can be integrated in space-saving fashion into a semiconductor circuit ( 10 ) intended for volatile storage with the aid of volatile memory cells ( 2 ). The memory cell ( 1 ) has a programmable component ( 3 ) having an electrical resistance that can be altered by reprogramming, and also first ( 8 ) and second switching elements ( 9 ), which switch a first current path (J 1 ) or a second current path (J 2 ) in conducting fashion upon activation of optionally a first ( 11 ) or a second word line ( 12 ). At least one of the two current paths leads via the programmable component ( 3 ). Potentials of two bit lines ( 21, 22 ) to which the memory cell ( 1 ) according to the invention is connected can be altered as a result of the first or the second current path (J 1 , J 2 ) being activated temporarily. The memory cell ( 1 ) permanently stores an item of digital information and can be driven by word lines ( 11, 12 ) and bit lines ( 21, 22 ) such as are conventionally used in volatile semiconductor memories ( 10 ). The invention opens up the possibility of integrating volatile and nonvolatile memory cells into a common memory cell array.
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