| 摘要 |
A MOS transistor having an extended drain structure and including a semiconductor substrate formed in a well of a first conductivity type. A gate insulating layer is formed on the substrate, a gate electrode is formed on the gate insulating layer, and a source region is formed in a first portion of the substrate, which is near to one side of the gate insulating layer and the gate electrode. A drain region is formed in a second portion of the substrate, which is near to another side of the gate insulating layer and the gate electrode. The second portion is recessed from the surface of the substrate by a predetermined depth.
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