发明名称 Device for electrostatic discharge protection and circuit thereof
摘要 Disclosed herein are a device for electrostatic protection and circuit thereof. According to the present invention, a device for electrostatic discharge protection comprises first to third wells formed on a semiconductor substrate, a first device, which includes a well pick-up region, a source region and a double diffused drain region, which are formed in predetermined regions on the first well, and a gate formed in a predetermined region on the semiconductor substrate, a second device, which includes a source region, a double diffused drain region and a first active region, which are formed in predetermined regions on the second well, and a gate formed in a predetermined region on the semiconductor substrate, and a second active region formed on the third well, wherein the gate, the source region and the well pick-up region of the first device are connected to a ground pad; the drain of the first device, and the source and the gate of the second device are connected to a power source pad; and the drain and the first active region of the second device, and the second active region are connecter to an I/O pad. Therefore, a single ESD protection device can cope with ESD stress of six modes, which can occur in each of I/O cells. Accordingly, a layout area necessary for ESD protection can be reduced.
申请公布号 US7385253(B2) 申请公布日期 2008.06.10
申请号 US20050051858 申请日期 2005.02.04
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 KIM KIL HO
分类号 H01L23/62;H01L27/04;H01L23/60;H01L27/02;H01L29/78 主分类号 H01L23/62
代理机构 代理人
主权项
地址