发明名称 Method of forming ohmic contact to a semiconductor body
摘要 A process for forming an ohmic contact on the back surface of a semiconductor body includes depositing a donor layer on the back surface of the semiconductor body followed by a sintering step to form a shallow intermetallic region capable of forming a low resistance contact with a contact metal.
申请公布号 US7384826(B2) 申请公布日期 2008.06.10
申请号 US20050169820 申请日期 2005.06.29
申请人 INTERNATIONAL RECTIFIER CORPORATION 发明人 RICHIERI GIOVANNI
分类号 H01L21/332 主分类号 H01L21/332
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