| 摘要 |
<p>A method for manufacturing a flash memory device is provided to reduce the interference between floating gates and to increase a coupling ratio in a cell by forming a U-shaped floating gate. A tunnel dielectric(102) and a first conductive layer(104) are formed on an upper portion of a semiconductor substrate(100). An isolation layer is formed on a field region of the semiconductor substrate. A liner-shaped second conductive layer(112) for floating gate is formed on a surface of the semiconductor substrate including the isolation layer and the first conductive layer. A dielectric layer is filled between the second conductive layers. The exposed surface of the second conductive layer is oxidized to form an oxide layer. The oxide layer is removed. The dielectric layer is removed to form a U-shaped floating gate. After the first conductive layer is formed on the active region, the dielectric layer is formed on the upper portion of the first conductive layer.</p> |
