| 摘要 |
A semiconductor device and method having high output and having reduced external resistance is reduced and improved radiating performance. A MOSFET ( 70 ) has a connecting portion for electrically connecting a surface electrode of a semiconductor pellet and a plurality of inner leads, a resin encapsulant ( 29 ), a plurality of outer leads ( 37 ), ( 38 ) protruding in parallel from the same lateral surface of the resin encapsulant ( 29 ) and a header ( 28 ) bonded to a back surface of the semiconductor pellet and having a header protruding portion ( 28 c) protruding from a lateral surface of the resin encapsulant ( 29 ) opposite to the lateral surface from which the outer leads protrude, wherein the header ( 28 ) has an exposed surface ( 28 b) exposed from the resin encapsulant ( 29 ); the outer leads ( 37 ), ( 38 ) are bent; and the exposed of the outer leads ( 37 ), ( 38 ) are provided at substantially the same height.
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