| 摘要 |
Disclosed is a method for forming a storage node contact of a semiconductor device. In such a method, there is provided a substrate formed with gates and source/drain regions. A landing plug poly is formed between the gates, and an insulating interlayer is formed over the entire surface of the substrate including the landing plug poly and the gates. The insulating interlayer is then etched to form a storage node contact hole exposing the landing plug poly. Thereafter, the landing plug poly exposed through the storage node contact hole is removed. Finally, a polysilicon film is filled up within a vacant portion from which the landing plug poly is removed and the storage node contact hole above the vacant portion.
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