发明名称 |
Fin field effect transistors with low resistance contact structures |
摘要 |
Fin FET semiconductor devices are provided which include a substrate, an active pattern that protrudes vertically from the substrate and that extends laterally in a first direction, a device isolation layer which has a top surface that is lower than a top surface of the active pattern, a gate structure on the substrate that extends laterally in a second direction to cover a portion of the active pattern and a conductive layer that is on at least portions of side surfaces of the active pattern that are adjacent a side portion of the gate structure. The conductive layer may comprise a semiconductor layer, and the semiconductor layer may be in electrical contact with a contact pad. In other embodiments, the conductive layer may comprise a contact pad.
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申请公布号 |
US7385237(B2) |
申请公布日期 |
2008.06.10 |
申请号 |
US20050076185 |
申请日期 |
2005.03.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE DEOK-HYUNG;BAE IN-DEOG;LEE BYEONG-CHAN;LEE JONG-WOOK |
分类号 |
H01L21/336;H01L29/08;H01L21/8234;H01L29/94 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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