| 摘要 |
A method for fabricating a semiconductor device is provided to prevent punch and open defects due to s step of a substrate by removing a step between a storage node contact plug and a second dielectric layer. A first dielectric layer(32) having a contact hole is formed on an upper portion of a substrate(31). A conductive material for a plug is formed in the contact hole. A planarized second dielectric layer(36) is formed on the whole surface of the resultant structure on which the conductive material is formed. An etch stop layer(41) and a third dielectric(40) are laminated on the second dielectric layer. The third dielectric, the etch stop layer, and the second dielectric layer are etched to form an open unit(43) exposing the conductive material. The second dielectric layer is formed with a material having excellent flatness. The material having excellent flatness is an oxide layer, which is deposited through an SOG(Spin On Glass) method. A thickness of the oxide layer is 300 to 400 Å.
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