| 摘要 |
Top coating compositions capable of being used in immersion lithography, and methods of forming photoresist patterns using the same, are provided. The top coating composition includes: a polymer, a base; and a solvent, wherein the polymer may be represented by Formula I: wherein R<SUB>1 </SUB>and R<SUB>2 </SUB>are independently selected from the group consisting of hydrogen, fluoro, methyl, and trifluoromethyl; X is a carboxylic acid group or a sulfonic acid group; Y is a carboxylic acid group or a sulfonic acid group, wherein the carboxylic acid group or sulfonic acid group is protected; Z is a monomer selected from the group consisting of a vinyl monomer, an alkyleneglycol, a maleic anhydride, an ethyleneimine, an oxazoline-containing monomer, acrylonitrile, an allylamide, a 3,4-dihydropyran, a 2,3-dihydrofuran, tetrafluoroethylene, or a combination thereof; and m, n, and q are integers wherein <?in-line-formulae description="In-line Formulae" end="lead"?>0.03<=m/(m+n+q)<=0.97,<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>0.03<=n/(m+n+q)<=0.97,<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>0<=q/(m+n+q)<=0.5;<?in-line-formulae description="In-line Formulae" end="tail"?> and wherein the solvent includes deionized water.
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