Method of forming exposure mask pattern, exposure mask pattern, and method of producing semiconductor device

摘要

A method of forming an exposure mask pattern providing edge division points P at edges of a design pattern ( 1 ) by predetermined intervals and correcting edge positions for each divided edge portion, wherein, for the design pattern ( 1 ), rectangular patterns ( 10 ) and ( 11 ) are formed having pairs of facing long sides and facing short sides in the design pattern ( 1 ). At that time the rectangular patterns ( 10 ) and ( 11 ) are formed at portions having widths W 1 a and W 2 a of the long sides in the design pattern ( 1 ) within a predetermined interval W 0 , so that W 1 a<=W 0 and W 2 a<=W 0 . Next, at each of the rectangular patterns ( 10 ) and ( 11 ), new edge division points P (P₁) are given along each of the facing long sides at predetermined intervals t from start points P₀ sharing a short side. Due to this, the exposure mask pattern used for lithography can be simplified and the precision of formation of a transfer pattern can be improved.