| 摘要 |
A method for forming a metal wire of a semiconductor device is provided to prevent the loss of a metal layer by forming an ozone protection layer using a CVD(Chemical Vapor Deposition) method. A metal layer is formed on an upper portion of a semiconductor substrate(100). An ozone protection layer(120) is formed on an upper portion of the metal layer. The ozone protection layer and the metal layer are patterned by using a photoresist layer pattern as an etch mask so that a metal wire(110a) is formed. A dielectric layer(140) is formed on the semiconductor substrate including the metal wire and the ozone protection layer. The metal layer is formed with one selected from tungsten(W), aluminum(Al), copper(Cu), silver(Au), silver(Ag), titanium(Ti), and tantalum(Ta). The ozone protection layer is formed through a CVD method using ozone. A thickness of the ozone protection layer is 200 to 500 Å.
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