FINFET AND METHOD OF MANUFACTURING THE SAME

摘要

A FinFET and a method of manufacturing the same are provided to prevent effectively threshold voltage drop generated in a device which has an oxide layer having the same thickness at the upper part and a side part of a fin, and to prevent the deterioration of an electrical property. A semiconductor fin(210) is formed, including an upper part plane and a side plane which have different crystal planes respectively. A first gate insulating layer(250a) is formed at the side plane of the semiconductor fin, and a second insulating layer(250b) which is thicker than the first gate insulating layer is formed at the upper part plane. A gate electrode is formed on the first and second gate insulating layers.