| 摘要 |
A surface-emitting type device includes a rectification section including a substrate and a first semiconductor layer formed above the substrate, and an emission section including a second semiconductor layer of a first conductivity type formed above the rectification section, an active layer formed above the second semiconductor layer and a third semiconductor layer of a second conductivity type formed above the active layer, wherein the rectification section and the emission section are electrically connected in parallel with each other, and the rectification section has a rectification action in a reverse direction with respect to the emission section.
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